Document
SOT223 N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD VERTICAL DMOS FET
ISSUE 2 - JANUARY 1996 FEATURES * VDS - 200V * RDS(ON) - 10Ω 7
ZVNL120G
D
PARTMARKING DETAIL - ZVNL120 D G
S
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate-Source Voltage Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot T j:T stg VALUE 200 320 2 ± 20 2 -55 to +150 UNIT V mA A V W °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Drain-Source Breakdown Voltage SYMBOL MIN. BV DSS 200 0.5 1.5 100 10 100 500 10 10 200 85 20 7 8 8 20 12 MAX. UNIT CONDITIONS. V V nA µA µA mA Ω Ω mS pF pF pF ns ns ns ns V DD≈ 25V, I D=250mA V DS=25V, V GS=0V, f=1MHz I D=1mA, V GS=0V I D =1mA, V DS= V GS V GS= ± 20V, V DS=0V V DS=200V, V GS=0V V DS=160V, V GS=0V, T=125°C (2) V DS=25V, V GS=5V V GS=5V, I D=250mA V GS=3V, I D=125mA V DS=25V, I D=250mA
Gate-Source Threshold Voltage V GS(th) Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Resistance (1) I GSS I DSS
I D(on) R DS(on)
Forward Transconductance(1)(2) g fs Input Capacitance (2) Common Source Output Capacitance (2) C iss C oss
Reverse Transfer Capacitance (2) Crss Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) t d(on) tr t d(off) tf
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
3 - 420
ZVNL120G
TYPICAL CHARACTERISTICS
1.6 VGS= 10V 8V 6V 5V 1.0 0.8 0.6 0.4 0.2 0 0 5 10 15 20 25 30 35 40 45 3V 2V 50 4V VGS= 10V 8V 6V 4V 0.6
ID(On) Drain Current (Amps)
1.0
ID(On)Drain Current (Amps)
1.4 1.2
0.8
0.4 3V 0.2 2V 0 0 2 4 6 8 10
VDS - Drain Source Voltage (Volts)
VDS - Drain Source Voltage (Volts)
Output Characteristics
Saturation Characteristics
1.6
ID(On) Drain Current (Amps)
VDS= 40V 20V
500
gfs-Transconductance (mS)
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 1 2 3 4 5 6 7 8 9 10
400
VDS=25V
10V
300
200
100
0
1
2
3
4
5
6
7
8
9
10
VGS-Gate Source Voltage (Volts)
VGS-Gate Source Voltage (Volts)
Transfer Characteristics
Transconductance v gate-source voltage
500
100
gfs-Transconductance (mS)
300 200 100 0 0
VDS=25V
C-Capacitance (pF)
400
80 60 Ciss 40 20 Coss Crss
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0
10
20
30
40
50
ID- Drain Current (Amps)
VDS-Drain Source Voltage (Volts)
Transconductance v drain current
Capacitance v drain-source voltage
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ZVNL120G
TYPICAL CHARACTERISTICS
RDS(on)-Drain Source On Resistance (Ω)
16 100 VGS=2V 3V 4V
VGS-Gate Source Voltage (Volts)
14 ID= 700mA 12 10
VDS= 50V 100V 150V
5V 10 10V
8 6 4 2 0 0 0.4 0.8 1.2 1.6 2.0 2.4
1 10 100 1000
Q-Charge (nC)
ID-Drain Current (mA)
Gate charge v gate-source voltage
RDS(ON) -Drain Source Resistance (Ω)
On-resistance v drain current
100
2.4
Normalised RDS(on) and VGS(th)
2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -80 -60 -40 -20 0
VGS=5V ID=250mA
Re
e nc ta sis
RD
) on S(
10
ID= 1A 0.5A 0.1A
VGS=VDS ID=1mA Gate Th reshold Voltage VGS(th) 20 40 60 80 100 120 140 160
e rc ou -S in a Dr
VGS=3V ID=125mA
1 1 10 20
VGS-Gate Source Voltage (Volts)
Tj-Junction Temperature (C°)
On-resistance vs gate-source voltage
Normalised RDS(on) and VGS(th) vs Temperature
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