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ZVN4210G

Zetex Semiconductors

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 - NOVEMBER 1995 FEATURES * Low RDS(on) = 1.5Ω PARTMARKING DE...


Zetex Semiconductors

ZVN4210G

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SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 - NOVEMBER 1995 FEATURES * Low RDS(on) = 1.5Ω PARTMARKING DETAIL - ZVN4210 ZVN4210G D S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate-Source Voltage Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot T j:T stg VALUE 100 0.8 6 ± 20 2 -55 to +150 UNIT V A A V W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage SYMBOL MIN. BV DSS 100 0.8 2.4 100 10 100 2.5 1.5 1.8 250 100 40 12 4 8 20 30 MAX. UNIT CONDITIONS. V V nA µA µA A Ω Ω mS pF pF pF ns ns ns ns V DD≈ 25V, I D=1.5A V DS=25V, V GS=0V, f=1MHz I D=1mA, V GS=0V I D =1mA, V DS= V GS V GS= ± 20V, V DS=0V V DS=100V, V GS=0 V DS=80V, V GS=0V, T=125°C (2) V DS=25V, V GS=10V V GS=10V,I D=1.5A V GS=5V,I D=500mA V DS=25V,I D=1.5A Gate-Source Threshold Voltage V GS(th) Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Resistance (1) I GSS I DSS I D(on) R DS(on) Forward Transconductance(1)(2) g fs Input Capacitance (2) Common Source Output Capacitance (2) C iss C oss Reverse Transfer Capacitance (2) Crss Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) t d(on) tr t d(off) tf (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured wi...




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