ZVN4206A

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – JUNE 94 FEATURES * 60 Volt VDS * RDS(on) = 1 Ω ZVN4206A D G S ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb =25°C Pulsed Drain Current Gate-Source Voltage Power Dissipation at T amb =25°C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot T j :T stg 60 E-LINE TO92 COMPATIBLE VALUE UNIT V mA A V W °C 600 8 ± 20 0.7 -55 to +150 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Resistance (1) SYMBOL MIN. BV DSS V GS(th) I GSS I DSS I D(on) R DS(on) 300 100 60 20 8 12 12 15 3 1 1.5 60 1.3 3 100 10 100 MAX. UNIT CONDITIONS. V V nA µA µA A Ω Ω mS pF pF pF ns ns ns ns V DD ≈ 25V, I D =1.5A V DS =25V, V GS =0V, f=1MHz I D =1mA, V GS =0V ID=1mA, V DS = V GS V GS = ± 20V, V DS =0V V DS =60V, V GS =0 V DS =48V, V GS =0V, T=125°C (2) V DS =25V, V GS =10V V GS =10V,I D =1.5A V GS =5V,I D =500mA V DS =25V,I D =1.5A Forward Transconductance(1)(2 g fs ) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) C iss C oss C rss td(on) tr td(off) tf (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measur...