ZVN3310A

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – MARCH 94 FEATURES * 100 Volt VDS * RDS(on)= 10Ω ZVN3310A D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate-Source Voltage Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot T j :T stg VALUE 100 200 2 ± 20 625 -55 to +150 UNIT V mA A V mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Resistance (1) SYMBOL MIN. BV DSS V GS(th) I GSS I DSS I D(on) R DS(on) 100 40 15 5 5 7 6 7 500 10 100 0.8 2.4 20 1 50 MAX. UNIT CONDITIONS. V V nA µA µA mA Ω mS pF pF pF ns ns ns ns V DD ≈ 25V, I D=500mA V DS=25V, V GS=0V, f=1MHz I D=1mA, V GS=0V ID=1mA, V DS= V GS V GS= ± 20V, V DS=0V V DS=100V, V GS=0 V DS=80V, V GS=0V, T=125°C (2) V DS=25V, V GS=10V V GS=10V,I D=500mA V DS=25V,I D=500mA Forward Transconductance(1)(2 g fs ) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) C iss C oss C rss t d(on) tr t d(off) tf 3-378 ZVN3310A TYPICAL CHARACTERISTICS ID(On) -On-State Drain Current (Amps) VGS= 10V 9V 8V 7V 6V 5V 4V 3V 0 10 20 30 40 50 ID(On) -On-State Drai...