ZVN3306F

SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 – JANUARY 1996 FEATURES * RDS(on)= 5Ω * 60 Volt VDS COMPLEMENTARY TYPE PARTMARKING DETAIL ZVP3306F MC ZVN3306F S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb =25°C Pulsed Drain Current Gate-Source Voltage Power Dissipation at T amb =25°C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot T j :T stg VALUE 60 150 3 ± 20 330 -55 to +150 SOT23 UNIT V mA A V mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(2) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) SYMBOL MIN. BV DSS V GS(th) I GSS I DSS ID(on) R DS(on) g fs C iss C oss C rss t d(on) tr t d(off) tf 3 typ 4 typ 4 typ 5 typ 150 35 25 8 5 7 6 8 750 5 60 0.8 2.4 20 0.5 50 MAX. UNIT CONDITIONS. V V nA µA µA mA Ω mS pF pF pF ns ns ns ns V DD ≈ 18V, I D =500mA V DS =18V, V GS =0V, f=1MHz I D =1mA, V GS =0V I D =1mA, V DS = V GS V GS = ± 20V, V DS =0V V DS =60V, V GS =0V V DS =48V, V GS =0V, T=125°C (2) V DS =18V, V GS =10V V GS =10V, I D =500mA V DS =18V, I D =500mA (1) Measured under pulsed conditions. Width=300µs. Duty cycle ...