Document
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94 FEATURES * 60 Volt VDS * RDSon)=5Ω
ZVN3306A
D G
S
E-Line TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate-Source Voltage Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot T j :T stg VALUE 60 270 3 ± 20 625 -55 to +150 UNIT V mA A V mW °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Resistance (1) SYMBOL MIN. BV DSS V GS(th) I GSS I DSS I D(on) R DS(on) 150 35 25 8 5 7 6 8 750 5 60 0.8 2.4 20 0.5 50 MAX. UNIT CONDITIONS. V V nA µA µA mA Ω mS pF pF pF ns ns ns ns V DD ≈ 18V, I D=500mA V DS=18V, V GS=0V, f=1MHz I D=1mA, V GS=0V ID=1mA, V DS= V GS V GS= ± 20V, V DS=0V V DS=60V, V GS=0 V DS=48V, V GS=0V, T=125°C (2) V DS=18V, V GS=10V V GS=10V,I D=500mA V DS=18V,I D=500mA
Forward Transconductance(1)(2 g fs ) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) C iss C oss C rss t d(on) tr t d(off) tf
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
3-375
(
2) Sample test.
ZVN3306A
TYPICAL CHARACTERISTICS
VGS=10V 9V
ID(On) -On-State Drain Current (Amps)
8V 0.8 7V 6V 5V 4V 3V 0 0 2 4 6 8 10
VDS-Drain Source Voltage (Volts)
1.0
10 8
0.6
6 ID= 1A 4
0.4
0.2
2
0.5A 0.25A
0 0 2 4 6 8 10
VDS - Drain Source Voltage (Volts)
VGS -Gate Source Voltage (Volts)
Saturation Characteristics
Voltage Saturation Characteristics
RDS(ON) -Drain Source Resistance (Ω)
ID(On) -On-State Drain Current (Amps)
1.0 VDS=10V 0.8
10
5 ID= 1A 0.5A 0.25A
0.6
0.4
0.2
0 0 2 4 6 8 10
1 1 10 20
VGS-Gate Source Voltage (Volts)
VGS-Gate Source Voltage (Volts)
Transfer Characteristics
On-resistance vs gate-source voltage
2.4
gfs-Forward Transconductance (mS)
Normalised RDS(on) and VGS(th)
2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -80 -60 -40 -20
ID=-0.5A
200 180 160 140 120 100 80 60 40 20 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VDS=18V
Dr
eR nc ta sis e eR rc ou -S n ai
n) (o DS
Gate Thresh old
Voltage VGS (th
)
0 20 40 60 80 100 120 140 160
T-Temperature (C°)
ID(on) - Drain Current (Amps)
Normalised RDS(on) and VGS(th) vs Temperature
Transconductance v drain current
3-376
ZVN3306A
TYPICAL CHARACTERISTICS
200 50
gfs-Transconductance (mS)
120 100 80 60 40 20 0 0 1 2 3 4
C-Capacitance (pF)
180 160 140 VDS=18V
40 30 20 10 0 Coss Crss 0 10 20 30 40 50 Ciss
5
6
7
8
9
10
VGS-Gate Source Voltage (Volts)
VDS-Drain Source Voltage (Volts)
Transconductance v gate-source voltage
Capacitance v drain-source voltage
VDD=20V 30V 50V
VGS-Gate Source Voltage (Volts)
16 14 12 10 8 6 4 2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 ID=800mA
Q-Charge (nC)
Gate charge v gate-source voltage
3-377
.