ZVN2110G

SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 – OCTOBER 1995 7 FEATURES * 6A PULSE DRAIN CURRENT * FAST SWITCHING SPEED ZVN2110G D S PARTMARKING DETAIL COMPLEMENTARY TYPE ZVN2110 ZVP2110G D G ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot T j:T stg VALUE 100 500 6 ± 20 2 -55 to +150 UNIT V mA A V W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(2) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) SYMBOL BVDSS VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf 250 1.5 MIN. TYP. MAX. UNIT 100 0.8 2.4 V V nA µA µA A 4 Ω mS 75 25 8 7 8 13 13 pF pF pF ns ns ns ns VDD ≈25V, ID=1A VDS=25 V, VGS=0V, f=1MHz CONDITIONS. ID=1mA, VGS=0V ID=1mA, VDS= VGS VGS=± 20V, VDS=0V VDS=100V, VGS=0 VDS=80V, VGS=0V, T=125°C(2) VDS=25V, VGS=10V VGS=10V, ID=1A VDS=25V, ID=1A 0.1 20 1 100 2 350 59 16 4 4 4 8 8 DRAIN-SOURCE DIODE CHARACTERISTICS PARAMETER SYMBOL MIN. TYP. MAX. UNIT 0.82 112 CONDITIONS. ...