ZVN2110A

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – MARCH 94 FEATURES * 100 Volt VDS * RDS(on)= 4Ω ZVN2110A D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot T j :T stg VALUE 100 320 6 ± 20 700 -55 to +150 UNIT V mA A V mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(2) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) SYMBOL MIN. BV DSS V GS(th) I GSS I DSS I D(on) R DS(on) g fs C iss C oss C rss t d(on) tr t d(off) tf 250 75 25 8 7 8 13 13 1.5 4 100 0.8 2.4 20 1 100 MAX. UNIT CONDITIONS. V V nA µA µA A Ω mS pF pF pF ns ns ns ns V DD ≈ 25V, I D=1A V DS=25 V, V GS=0V, f=1MHz I D=1mA, V GS=0V ID=1mA, V DS= V GS V GS= ± 20V, V DS=0V V DS=100V, V GS=0 V DS=80V, V GS=0V, T=125°C (2) V DS=25V, V GS=10V V GS=10V,I D=1A V DS=25V,I D=1A (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. 3 ) Switching times measured with 50Ω source impedance and <5ns rise tim...