ZVN2106

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – MARCH 94 FEATURES * 60 Volt VDS * RDS(on)=2Ω ZVN2106A D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot T j :T stg VALUE 60 450 8 ± 20 700 -55 to +150 UNIT V mA A V mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(2) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) SYMBOL MIN. BV DSS V GS(th) I GSS I DSS 60 0.8 2.4 20 500 100 2 2 300 75 45 20 MAX. UNIT CONDITIONS. V V nA nA µA A Ω mS pF pF pF V DS=18 V, V GS=0V, f=1MHz I D=1mA, V GS=0V ID=1mA, V DS= V GS V GS= ± 20V, V DS=0V V DS=60 V, V GS=0 V DS=48 V, V GS=0V, T=125°C (2) V DS=18V, V GS=10V V GS=10V,I D=1A V DS=18V,I D=1A I D(on) R DS(on) g fs C iss C oss C rss 3-361 ZVN2106A TYPICAL CHARACTERISTICS ID(On) -On-State Drain Current (Amps) 4 VDS-Drain Source Voltage (Volts) VGS= 10V 9V 8V 7V 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 2 4 6 8 10 0.5A 0.25A ID= 1A 3 2 6V 5V 4V 1 0 0 1 2 3 4 5 3V VDS - Drain Source Voltage (Volts) VGS-Gate Source Voltage (V...