SOT323 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS
ISSUE 2 – FEBRUARY 1999 PARTMARKING DETAILS ZUMT817-25 ZUMT817-40 T7 ...
SOT323
NPN SILICON PLANAR MEDIUM POWER
TRANSISTORS
ISSUE 2 – FEBRUARY 1999 PARTMARKING DETAILS ZUMT817-25 ZUMT817-40 T7 T23
ZUMT817-25 ZUMT817-40
COMPLEMENTARY TYPES
ZUMT817-25 ZUMT817-40 -
ZUMT807-25 ZUMT807-40– T7
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Peak Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC IB IBM Ptot Tj:Tstg VALUE 50 45 5 1 500 100 200 330 -55 to +150 UNIT V V V A mA mA mA mW °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Turn-on Voltage Static Forward Current Transfer Ratio -25 -40 Transition Frequency Collector-base Capacitance fT Cobo SYMBOL ICBO IEBO VCE(sat) VBE(on) hFE 100 40 160 250 200 5.0 MIN. TYP. MAX. UNIT CONDITIONS. 0.1 5 10 700 1.2 600 400 600 MHz pF
A A A
mV V
VCB=20V, IE=0 VCB=20V, IE=0, Tamb=150°C VEB=5V, IC=0 IC=500mA, IB=50mA* IC=500mA, VCE=1V* IC=100mA, VCE=1V* IC=500mA, VCE=1V* IC=100mA, VCE=1V* IC=100mA, VCE=1V* IC=10mA, VCE=5V f=35MHz IE=Ie=0, VCB=10V f=1MHz
*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%
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