SOT323 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR
ISSUE 2 – FEBRUARY 1999 PARTMARKING DETAILS ZUMT807-25 ZUMT807-40 T8 T...
SOT323
PNP SILICON PLANAR MEDIUM POWER
TRANSISTOR
ISSUE 2 – FEBRUARY 1999 PARTMARKING DETAILS ZUMT807-25 ZUMT807-40 T8 T24
ZUMT807-25 ZUMT807-40
COMPLEMENTARY TYPES
ZUMT807-25 ZUMT807-40 -
ZUMT817-25 ZUMT817-40
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Peak Base Current Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC IB I BM P tot T j:T stg VALUE -50 -45 -5 -1 -500 -100 -200 330 -55 to +150 UNIT V V V A mA mA mA mW °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Turn-on Voltage Static Forward Current Transfer Ratio -25 -40 Transition Frequency Collector-base Capacitance fT C obo SYMBOL I CBO I EBO V CE(sat) V BE(on) h FE 100 40 160 250 100 8.0 MIN. TYP. MAX. UNIT CONDITIONS. -0.1 -5 -10 -700 -1.2 600 400 600 MHz pF
A A A
mV V
V CB=-20V, I E=0 V CB=-20V, I E=0, T amb=150°C V EB=-5V, I C=0 I C=-500mA, I B=-50mA* I C=-500mA, V CE=-1V* I C=-100mA, V CE=-1V* I C=-500mA, V CE=-1V* I C=-100mA, V CE=-1V* I C=-100mA, V CE=-1V* I C=-10mA, V CE=-5V f=35MHz I E=I e=0, V CB=-10V f=1MHz
*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%
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