ZUMD54

SOT323 SILICON EPITAXIAL SCHOTTKY BARRIER DIODES ISSUE 1– DECEMBER 1998 1 1 ZUMD54 ZUMD54C 3 2 3 2 3 1 SINGLE ZUMD54 Partmark: D8 COMMON CATHODE ZUMD54C Partmark: D8C FEATURES: Low VF & High Current Capability APPLICATIONS: PSU, Mobile Telecomms & SCSI ABSOLUTE MAXIMUM RATINGS. PARAMETER Continuous Reverse Voltage Forward Current Forward Voltage @ I F =10mA Repetitive Peak Forward Current Non Repetitive Forward Current Power Dissipation at T amb=25°C Storage Temperature Range JunctionTemperature ¤ t<1s SYMBOL VR IF VF I FRM I FSM P tot T stg Tj VALUE 30 200 400 300 600 330 -55 to +150 125 UNIT V mA mV mA mA mW °C °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Reverse Breakdown Voltage Forward Voltage SYMBOL V (BR)R VF MIN. 30 TYP. 50 135 200 280 350 530 1.4 7.5 240 320 400 500 1000 2 10 5 MAX. UNIT V mV mV mV mV mV CONDITIONS. I R=10 µ A I F=0.1mA I F=1mA I F=10mA I F=30mA I F=100mA V R=25V f=1MHz,V R=1V switched from I F=10mA to I R=10mA R L=100 Ω , I R=1mA Reverse Current Diode Capacitance Reverse Recovery Time IR CD t rr µA pF ns ¤ Dual Device; For simultaneous continuous use Tj=100°C. ZUMD54 ZUMD54C TYPICAL CHARACTERISTICS 1 Forward Current IF (A) 10m 100m Reverse Current IR (A) 1m +125°C +85°C 10m +125°C +85°C +25°C 100µ 1m 100µ 10µ 0 0.15 0.3 0.45 0.6 0.75 0.9 10µ +25°C 1µ 0 10 20 30 Forward Voltage VF (V) Reverse Voltage VR (V) IF v VF Characteristics Diode Capacitance CT (pF) 15 330 IR v VR Characteristics ...