PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR
ISSUE 3 JUNE 94 FEATURES * 0.5 Amp continuous current * Up to ...
PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT
TRANSISTOR
ISSUE 3 JUNE 94 FEATURES * 0.5 Amp continuous current * Up to 1.5 Amps peak current * Very low saturation voltage * Excellent gain characteristics up to 1 Amp * Spice model available
ZTX958
C B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Practical Power Dissipation* Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptotp Ptot Tj:Tstg -400 -400 -6 -1.5 -0.5 1.58 1.2
E-Line TO92 Compatible VALUE UNIT V V V A A W W °C
-55 to +200
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltag Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CER V(BR)CEO V(BR)EBO ICBO ICER R ≤1KΩ IEBO VCE(sat) VBE(sat) 3-330 -100 -150 -300 -790 MIN. -400 -400 -400 -6 TYP. -600 -600 -550 -8 -50 -1 -50 -1 -10 -150 -200 -400 -900 MAX. UNIT V V V V nA nA CONDITIONS. IC=-100µA IC=-1µA, RB ≤1KΩ IC=-10mA* IE=-100µA VCB=-300V VCB=-300V, Tamb=100°C VCB=-300V VCB=-300V, Tamb=100°C VE...