ZTX955

PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ISSUE 3 – JUNE 94 FEATURES * 3 Amps continuous current * Up to 10 Amps peak current * Very low saturation voltage * Excellent gain characteristics up to 3 Amps * Spice model available ZTX955 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Practical Power Dissipation* Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptotp Ptot Tj:Tstg -180 -140 -6 -10 -3 1.58 1.2 E-Line TO92 Compatible VALUE UNIT V V V A A W W °C -55 to +200 *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltag Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CER V(BR)CEO V(BR)EBO ICBO ICER R ≤1KΩ IEBO VCE(sat) -30 -60 -90 -250 -920 3-321 MIN. -180 -180 -140 -6 TYP. -210 -210 -170 -8 -50 -1 -50 -1 -10 -60 -100 -120 -330 -1050 MAX. UNIT V V V V nA nA nA mV mV mV mV mV CONDITIONS. IC=-100µA IC=-1µA, RB ≤1KΩ IC=-10mA* IE=-100µA VCB=-150V VCB=-150V, Tamb=100°C VCB=-150V VCB=-150V, Tamb=100°C VEB=-6V IC=-100mA, IB=...