ZTX951

PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ISSUE 4 – JUNE 94 * * * * * 4 Amps continuous current Up to 15 Amps peak current Very low saturation voltage Excellent gain up to 10 Amps Spice model available ZTX951 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Practical Power Dissipation* Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptotp Ptot Tj:Tstg -100 -60 -6 -15 -4 1.58 1.2 E-Line TO92 Compatible VALUE UNIT V V V A A W W °C -55 to +200 *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltag Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CER V(BR)CEO V(BR)EBO ICBO ICER R ≤1KΩ IEBO VCE(sat) -15 -60 -120 -220 -960 3-315 MIN. -100 -100 -60 -6 TYP. -140 -140 -90 -8 -50 -1 -50 -1 -10 -50 -100 -160 -300 -1100 MAX. UNIT V V V V nA nA nA mV mV mV mV mV CONDITIONS. IC=-100µA IC=-1µA, RB ≤1KΩ IC=-10mA* IE=-100µA VCB=-80V VCB=-80V, Tamb=100°C VCB=-80V VCB=-80V, Tamb=100°C VEB=-6V IC=-100mA, IB=-10mA* IC=-1A, IB=-100mA* IC=-...