ZTX851

NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ISSUE 2 – AUGUST 94 FEATURES * 60 Volt VCEO * 5 Amps continuous current * Up to 20 Amps peak current * Very low saturation voltage * Ptot=1.2 Watts APPLICATIONS * Emergency lighting circuits ZTX851 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Practical Power Dissipation* Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptotp Ptot Tj:Tstg 150 60 6 20 5 1.58 1.2 E-Line TO92 Compatible VALUE UNIT V V V A A W W °C -55 to +200 *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltag Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CER V(BR)CEO V(BR)EBO ICBO ICER R ≤1KΩ IEBO VCE(sat) 10 50 100 200 920 3-294 MIN. 150 150 60 6 TYP. 220 220 85 8 50 1 50 1 10 50 100 150 250 1050 MAX. UNIT V V V V µA µA CONDITIONS. IC=100µA IC=1µA, RB ≤1KΩ IC=10mA* IE=100µA VCB=120V VCB=120V, Tamb=100°C VCB=120V VCB=120V, Tamb=100°C VEB=6V IC=0.1A, IB=5mA* IC=1A, IB=50mA...