ZTX788A

PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR PROVISIONAL DATASHEET ISSUE 2 – SEPTEMBER 94 FEATURES * 15 Volt VCEO * Gain of 200 at IC=2 Amps * Very low saturation voltage ZTX788A C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Practical Power Dissipation* Power Dissipation at Tamb=25°C derate above 25°C SYMBOL VCBO VCEO VEBO ICM IC Ptotp Ptot Tj:Tstg -20 -15 -5 -10 -3 1.5 1 5.7 E-Line TO92 Compatible VALUE UNIT V V V A A W W mW/°C °C Operating and Storage Temperature Range -55 to +200 *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE 300 250 200 80 3-271 MIN. -20 -15 -5 TYP. -30 -20 -8.5 -0.1 -10 -0.1 MAX. UNIT V V V µA µA µA CONDITIONS. IC=-100µA IC=-10mA* IE=-100µA VCB=-10V VCB=-10V, Tamb=100°C VEB=-4V IC=-0.1A, IB=-2mA* IC=-2A, IB=-20mA* IC=-3A, IB=-200mA* IC=-2A, IB=-20mA* IC=-2A, VCE=-3V* IC=-10mA, VCE=-1V* IC=-1A, VCE=-1V* IC=-2A, VCE=-1V* IC=-10A...