ZTX757

PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORS ISSUE 2 – JULY 94 FEATURES * 300 Volt VCEO * 0.5 Amp continuous current * Ptot= 1 Watt ZTX756 ZTX757 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg ZTX756 -200 -200 -5 -1 -0.5 1 E-Line TO92 Compatible ZTX757 -300 -300 UNIT V V V A A W °C -55 to +200 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE fT Cobo 50 40 30 20 3-265 ZTX756 ZTX757 UNIT V V V -100 -100 -0.5 -1.0 -1.0 50 40 30 20 MHz pF nA nA nA V V V CONDITIONS. MIN. Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance -200 -200 -5 -100 -100 -0.5 -1.0 -1.0 MAX. MIN. -300 -300 -5 MAX. IC=-100µ A, IE=0 IC=-10mA, IB=0* IE=-100µ A, IC=0 VCB=-160V, IE=0 VCB=-200V, IE=0 VEB=-3V, IC=0 IC=-100mA, IB=-10mA* IC=-100mA, IB=-10mA* IC=-100mA, VCE=-5V* IC=-100mA, VCE=-5V* IC=-10mA, VCE=-5V* IC=-10mA, VCE=-20V f=20MHz VCB=-20V, f=1MHz ZTX756 ZTX757 TYPICAL CHARACTERISTICS 250 td t...