ZTX755

PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 2 – JULY 94 FEATURES * 150 Volt VCEO * 1 Amp continuous current * Low saturation voltage * Ptot= 1 Watt ZTX754 ZTX755 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg ZTX754 -125 -125 -5 -2 -1 1 E-Line TO92 Compatible ZTX755 -150 -150 UNIT V V V A A W °C -55 to +200 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) 50 50 20 30 20 3-263 ZTX754 MIN. -125 -125 -5 -100 -100 -0.5 -0.5 -1.1 -1.0 50 50 20 30 20 MHz pF MAX. ZTX755 MIN. -150 -150 -5 -100 -100 -0.5 -0.5 -1.1 -1.0 MAX. V V V nA nA nA V V V V IC=-100µA, IE=0 IC=-10mA, IB=0* IE=-100µA, IC=0 VCB=-100V, IE=0 VCB=-125V, IE=0 VEB=-3V, IC=0 IC=-500mA, IB=-50mA* IC=-1A, IB=-200mA* IC=-500mA, IB=-50mA* IC=-500mA, VCE=-5V* IC=-10mA, VCE=-5V IC=-500mA, VCE=-5V* IC=-1A, VCE=-5V* IC=-10mA, VCE=-20V f=20MHz VCB=-20V, f=1MHz UNIT CONDITIONS. Static Forward hFE Current Transfer Ratio Transition Frequency Output Capacit...