ZTX718

PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 4– MAY 1998 FEATURES * 6A Peak pulse current * Excellent hFE characteristics up to 6A (pulsed) * low saturation voltage * IC Cont 2.5A APPLICATIONS * Power MOSFET gate driver in conjunction with complementary ZTX618 ZTX718 C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Practical Power Dissipation* Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC IB P totp P tot T j:T stg VALUE -20 -20 -5 -6 -2.5 -500 1.5 1 -55 to +200 UNIT V V V A A mA W W °C * Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. ZTX718 ELECTRIAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage SYMBOL V (BR)CBO MIN. -20 TYP. -65 MAX. UNIT V CONDITIONS. I C=-100 µ A I C=-10mA* I E=-100 µ A V CB=-15V V (BR)CEO -20 -55 V V (BR)EBO -5 -8.8 V I CBO -100 nA I EBO -100 nA V EB=-4V I CES -100 nA V CES =-15V V CE(sat) -16 -130 -145 -190 -0.98 -40 -200 -220 -260 -1.1 mV mV mV mV V I C=-0.1A, I B=-10mA* I C=-1A, I B=-20mA* I C=-1.5A, I B=-50mA* I C=-2.5A, I B=-200mA* I C=-2.5A, I B=...