ZTX603

NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ISSUE 1 – MARCH 94 FEATURES * 80 Volt VCEO * 1 Amp continuous current * Gain of 2K at IC=1 Amp * Ptot= 1 Watt ZTX602 ZTX603 C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb = 25°C derate above 25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg ZTX602 80 60 10 4 1 1 5.7 E-Line TO92 Compatible ZTX603 100 80 UNIT V V V A A W mW/ °C °C E -55 to +200 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO 80 60 10 0.01 10 IEBO ICES VCE(sat) VBE(sat) VBE(on) 0.1 10 1.0 1.0 1.8 1.7 3-209 ZTX602 MIN. 100 80 10 ZTX603 MAX. V V V µA µA µA µA µA µA µA UNIT CONDITIONS. IC=100µ A IC=10mA* IE=100µ A VCB=60V VCB=80V VCB=60V,T amb =100°C V CB=80V, T amb =100°C VEB=8V VCES=60V VCES=80V IC=400mA, IB=0.4mA* IC=1A, IB=1mA* IC=1A, IB=1mA* IC=1A, VCE=5V* MAX. MIN. 0.01 10 0.1 Emitter Cut-Off Current Colllector-Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage 10 1.0 1.0 1.8 1.7 V V V V ZTX602 ZTX603 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL ZTX602 MIN. Static For...