ZTX554

PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 – MARCH 94 FEATURES * 150 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt ZTX554 ZTX555 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation: at Tamb = 25°C derate above 25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg ZTX554 -140 -125 -5 -2 -1 1 5.7 E-Line TO92 Compatible ZTX555 -160 -150 UNIT V V V A A W mW/ °C °C -55 to +200 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-on Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) 50 50 100 10 3-198 ZTX554 MIN. -140 -125 -5 -0.1 -0.1 -0.3 -1 -1 300 50 50 100 10 MAX ZTX555 MIN. -160 -150 -5 -0.1 -0.1 -0.3 -1 -1 300 MHz pF MAX V V V µA µA µA UNIT CONDITIONS. IC=-100µA IC=-10mA* IE=-100µA VCB=-120V VCB=-140V VEB=-4V IC=-100mA, IB=-10mA* IC=-100mA, IB=-10mA* IC=-100mA, VCE=-10V* IC=-10mA, VCE=-10V* IC=-300mA, VCE=-10V* IC=-50mA, VCE=-10V f=100MHz VCB=-10V, f=1MHz V V V Static Forward hFE Current Transfer Ratio Transition Frequency Output Capacitance fT Cobo ZTX554 ZTX555 TYPICAL CHARACTERISTICS ZTX554/55-2 IB1=IB2=I...