ZTX537C

PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 2 – MARCH 94 ZTX537C C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg E-Line TO92 Compatible VALUE -50 -45 -5 -1 -800 750 -55 to +175 UNIT V V V A mA mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO MIN. TYP. -50 -45 -5 -100 -0.2 -0.7 -1.2 250 170 200 12 630 MHz pF MAX. UNIT V V V nA µA CONDITIONS. IC=-100µ A IC=-100µ A IE=-100µ A, IE=0 VCB=-45V VEB=-4V IC=-500mA, IB=-50mA* IC=-300mA, VCE=-1V* IC=-100mA, VCE=-1V* IC=-300mA, VCE=-1V* IC=-10mA, VCE=-5V f=50MHz VCB=-10V, f=1MHz Emitter Cut-Off Current IEBO Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage VCE(sat) VBE(on) V V Static Forward Current hFE Transfer Ratio Transition Frequency Output Capacitance fT Cobo *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3-188 ...