ZTX454

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 2 – MARCH 1994 FEATURES * 140 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt ZTX454 ZTX455 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO I CM IC Ptot Tj:Tstg ZTX454 140 120 5 2 1 1 E-Line TO92 Compatible ZTX455 160 140 UNIT V V V A A W °C -55 to +200 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance SYMBOL V(BR)CBO VCEO(sus) V(BR)EBO ICBO IEBO VCE(sat) hFE fT Cobo 100 30 10† 100 15 140 120 5 ZTX454 MIN. 160 140 5 0.1 0.1 0.7 100 10† 100 15 MHz pF 300 ZTX455 MAX. V V V µA µA µA UNIT CONDITIONS. IC=100µ A IC=10mA* IE=100µ A VCB=140V VCB=120V VEB=4V IC=150mA, IB=15mA IC=200mA, IB=20mA IC=150mA, VCE=10V* IC=200mA, VCE=1V* IC=1A, VCE=10V* IC=50mA, VCE=10V f=100MHz VCB=10V, f=1MHz MAX. MIN. 0.1 0.1 0.7 1.0 300 V * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% † Typical 3-179 ZTX454 ZTX455 TYPICAL CHARACTERISTICS tf ns 900 ts µS tf 800 ts 7 6 5 tr 300 600 4 3 200 500 2 100 0 400 td 1 0 0.1 1 50 td nS 100 tr ns 500 0.4 VCE...