NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 2 MARCH 1994 FEATURES * 60 Volt VCEO * 1 Amp continuous current * Pt...
NPN SILICON PLANAR
MEDIUM POWER
TRANSISTORS
ISSUE 2 MARCH 1994 FEATURES * 60 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt
ZTX450 ZTX451
C B E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range
SYMBOL
VCBO VCEO VEBO ICM IC Ptot Tj:Tstg
E-Line TO92 Compatible
ZTX450 ZTX451
60
80
45
60
5
2
1
1
-55 to +200
UNIT V V V A A W °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL
ZTX450
ZTX451 UNIT
MIN. MAX. MIN. MAX.
Collector-Base
V(BR)CBO 60
80
V
Breakdown Voltage
Collector-Emitter
VCEO(sus) 45
60
V
Sustaining Voltage
Emitter-Base
V(BR)EBO 5
5
V
Breakdown Voltage
Collector Cut-Off
ICBO
Current
0.1
µA
0.1 µA
Emitter Cut-Off
IEBO
Current
0.1
0.1 µA
Collector-Emitter
VCE(sat)
Saturation Voltage
0.25
0.35 V
Base-Emitter
VBE(sat)
1.1
1.1 V
Saturation Voltage
Static Forward
hFE
Current Transfer
Ratio
100 300 50 150
15
10
Transition Frequency
fT
150
150
MHz
Output Capacitance Cobo
15
15 pF
CONDITIONS.
IC=100µA IC=10mA* IE=100µA VCB=45V VCB=60V VEB=4V IC=150mA, IB=15mA* IC=150mA, IB=15mA* IC=150mA, VCE=10V* IC=1A, VCE=10V* IC=50mA, VCE=10V f=100MHz VCB=10V, f=1MHz
3-175
VCE(sat) - (Volts)
ZTX450 ZTX451
TYPICAL CHARACTERISTICS
0.4
0.3 IC/IB=10
0.2
ZTX451
0.1
ZTX450
0
0.001
0.01
0.1
1
IC - Collector Current (Amps)
...