ZTX1151A

PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 1 - JANUARY 1997 FEATURES * VCEO= -40V * 3 Amp Continuous Current * 5 Amp Pulse Current * Low Saturation voltage * High Gain ZTX1151A C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC IB P tot T j:T stg VALUE -45 -40 -5 -5 -3 -500 1 -55 to +200 UNIT V V V A A mA W °C ZTX1151A ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). VALUE PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage SYMBOL MIN. V(BR)CBO V(BR)CES V(BR)CEO V(BR)CEV -45 -40 -40 -40 -5 TYP. -95 -90 -85 -90 -8.5 -0.3 -0.3 -0.3 -60 -115 -135 -160 -180 -950 -815 270 250 180 100 450 400 300 190 40 145 40 170 -100 -100 -100 -90 -170 -210 -230 -240 -1050 -950 MAX. UNIT V V V V V nA nA nA mV mV mV mV mV mV mV CONDITIONS. IC=-100µA IC=-100µA IC=-10mA IC=-100µA, VEB=+1V IE=-100µA VCB=-36V VEB=-4V VCE=-32V IC=-0.1A, IB=-1.0mA* IC=-0.5A, IB=-5mA* IC=-1A, IB=-20mA* IC=-1.8A, IB=-70mA* IC=-3A, IB=-250mA* IC=-3A, IB=-250mA* IC=-3A, VCE=-2V* IC=-10mA, VCE=-2V* IC=-0.5A, VCE=-2V* IC=-2A, VCE=-2V* IC=-3A, VCE=-2V* IC=-5A, VCE=-2V* Emitter-Base Breakdown V(BR)EBO Voltage Collector Cut-Off Current Emit...