ZTX1147A

PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 1 - JANUARY 1997 FEATURES * VCEO= -12V * 4 Amp Continuous Current * 20 Amp pulse Current * Low Saturation Voltage * High Gain ZTX1147A C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC IB P tot T j:T stg VALUE -15 -12 -5 -20 -4 -500 1 -55 to +200 UNIT V V V A A mA W °C ZTX1147A ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). VALUE PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage SYMBOL MIN. V(BR)CBO V(BR)CES V(BR)CEO V(BR)CEV -15 -12 -12 -12 -5 TYP. -35 -25 -25 -25 -8.5 -0.3 -0.3 -0.3 -25 -70 -90 -115 -175 -890 -830 270 250 200 170 90 450 400 340 270 150 50 115 80 150 220 -100 -100 -100 -50 -110 -130 -170 -235 -1000 -950 MAX. UNIT V V V V V nA nA nA mV mV mV mV mV mV mV CONDITIONS. IC=-100µA IC=-100µA IC=-10mA IC=-100µA, VEB=+1V IE=-100µA VCB=-12V VEB=-4V VCE=-10V IC=-0.1A, IB=-1mA* IC=-0.5A, IB=-2.5mA* IC=-1A, IB=-6mA* IC=-2A, IB=-20mA* IC=-4A, IB=-70mA* IC=-4A, IB=-70mA* IC=-4A, VCE=-2V* IC=-10mA, VCE=-2V* IC=-0.5A, VCE=-2V* IC=-2.0A, VCE=-2V* IC=-4.0A, VCE=-2V* IC=-10A, VCE=-2V* IC=-20A, VCE=-2V* Emitter-Base Breakdown V(BR)EBO Voltage C...