NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
ISSUE 3 FEBRUARY 1995 FEATURES * VCEV=50V * Very Low Saturation V...
NPN SILICON PLANAR MEDIUM POWER HIGH GAIN
TRANSISTOR
ISSUE 3 FEBRUARY 1995 FEATURES * VCEV=50V * Very Low Saturation Voltages * High Gain * 20 Amps pulse current APPLICATIONS * LCD Backlight Convertors * Emergency Lighting * DC-DC Convertors
ZTX1048A
C B
E
E-Line TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg ZTX1048A 50 17.5 5 20 4 500 1 -55 to +200 UNIT V V V A A mA W °C
ZTX1048A
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current SYMBOL V(BR)CBO VCES VCEO VCEV V(BR)EBO ICBO IEBO ICES ZTX1048A MIN. 50 50 17.5 50 5 TYP. 85 85 24 85 8.7 0.3 0.3 0.3 27 55 110 210 860 860 280 300 300 220 50 440 450 450 330 80 150 60 130 180 80 10 10 10 45 75 150 245 950 950 MAX. UNIT V V V V V nA nA nA mV mV mV mV mV mV CONDITIONS. IC=100µA IC=100µA IC=10mA IC=100µA, VEB=1V IE=100µA VCB=35V VEB=4V VCES=35V IC=0.5A, IB=10mA* IC=1A, IB=10mA* IC=2A, IB=10mA* IC=4A, IB=20mA* IC=4A, IB=20mA* IC=4A, VCE=2V* IC=10mA, VCE=2V* IC=0.5A, VCE=2V* IC=1A, VCE=2V* IC=4A, VCE=2...