DatasheetsPDF.com

X0402NF Dataheets PDF



Part Number X0402NF
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description 4A SCRS
Datasheet X0402NF DatasheetX0402NF Datasheet (PDF)

X04 Series SENSITIVE 4A SCRS MAIN FEATURES: Symbol IT(RMS) V DRM/VRRM IGT Value 4 600 and 800 50 to 200 Unit A V µA DESCRIPTION Thanks to highly sensitive triggering levels, the X04 SCR series is suitable for all applications where the available gate current is limited, such as capacitive discharge ignitions, motor control in kitchen aids, overvoltage crowbar protection in low power supplies... TO202-3 (X04xxF) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) Parameter RMS on-state current.

  X0402NF   X0402NF



Document
X04 Series SENSITIVE 4A SCRS MAIN FEATURES: Symbol IT(RMS) V DRM/VRRM IGT Value 4 600 and 800 50 to 200 Unit A V µA DESCRIPTION Thanks to highly sensitive triggering levels, the X04 SCR series is suitable for all applications where the available gate current is limited, such as capacitive discharge ignitions, motor control in kitchen aids, overvoltage crowbar protection in low power supplies... TO202-3 (X04xxF) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) Parameter RMS on-state current (180° conduction angle) Tl = 60°C Tamb = 25°C IT(AV) Average on-state current (180° conduction angle) Tl = 60°C Tamb = 25°C ITSM Non repetitive surge peak on-state current I t Value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100ns Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range ² Value 4 1.35 2.5 0.9 33 Tj = 25°C tp = 10 ms tp = 10 ms F = 60 Hz tp = 20 µs Tj = 25°C Tj = 125°C Tj = 125°C Tj = 125°C 30 4.5 50 1.2 0.2 - 40 to + 150 - 40 to + 125 Unit A A tp = 8.3 ms A It dI/dt IGM PG(AV) Tstg Tj ² A 2S A/µs A W °C September 2000 - Ed: 3 1/5 X04 Series ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol Test Conditions 02 IGT VD = 12 V VGT VGD VRG IH IL dV/dt VTM Vt0 Rd IDRM IRRM VD = VDRM IRG = 10 µA IT = 50mA IG = 1mA RGK = 1kΩ RGK = 1kΩ RGK = 1kΩ Tj = 110°C Tj = 25°C Tj = 125°C Tj = 125°C Tj = 25°C Tj = 125°C RL = 3.3 kΩ RGK = 1 kΩ Tj = 125°C RL = 140 Ω MIN. MAX. MAX. MIN. MIN. MAX. MIN. MIN. MAX. MAX. MAX. MAX. 10 1.8 0.95 100 5 1 _ 200 0.8 0.1 8 5 6 15 X04xx 05 20 50 µA V V V mA mA V/µs V V mΩ µA mA Unit VD = 67% VDRM ITM = 8 A tp = 380 µs Threshold voltage Dynamic resistance VDRM = VRRM RGK = 1 kΩ THERMAL RESISTANCES Symbol Rth(j-l) Rth(j-a) Junction to leads (DC) Junction to ambient (DC) Parameter Value 15 100 Unit °C/W PRODUCT SELECTOR Voltage Part Number 600 V X0402MF X0402NF X0405MF X0405NF X X X X 800 V 200 µA 200 µA 50 µA 50 µA TO202-3 TO202-3 TO202-3 TO202-3 Sensitivity Package 2/5 X04 Series ORDERING INFORMATION OTHER INFORMATION Part Number X04xxyF 1AA2 X04xxyF 0AA2 Marking X04xxyF X04xxyF Weight 0.8 g 0.8 g Base Quantity 250 50 Packing mode Bulk Tube Note: xx = sensitivity, y = voltage Fig. 1: Maximum average power dissipation versus average on-state current. Fig. 2-1: Average and D.C. on-state current versus lead temperature. Fig. 2-2: Average and D.C. on-state current versus ambient temperature (device mounted on FR4 with recommended pad layout). Fig. 3: Relative variation of thermal impedance junction to ambient versus pulse duration. 3/5 X04 Series Fig. 4: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values). Fig. 5: Relative variation of holding current versus gate-cathode resistance (typical values). Fig. 6: Relative variation of dV/dt immunity versus gate-cathode resistance (typical values). Fig. 7: Relative variation of dV/dt immunity versus gate-cathode capacitance (typical values). Fig. 8: Surge peak on-state current versus number of cycles. Fig. 9: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding value of I²t. 4/5 X04 Series Fig. 10: On-state characteristics (maximum values). PACKAGE MECHANICAL DATA TO202-3 (Plastic) DIMENSIONS REF. Millimeters Min. A C D F H J M N N1 O P Typ. 7.3 10.5 1.5 0.51 1.5 4.5 5.3 2.54 1.4 0.7 0.100 0.055 0.028 0.020 0.059 0.177 0.209 Max. 10.1 0.287 0.413 0.059 Min. Inches Typ. Max. 0.398 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2000 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom http://www.st.com 5/5 .


X0402MF X0402NF X0403MF


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)