MILITARY HIGH SPEED 2K x 8 CMOS PROM/RPROM
WS57C191C/291C
HIGH SPEED 2K x 8 CMOS PROM/RPROM
KEY FEATURES
• Ultra-Fast Access Time
— t ACC = 25 ns — t CS = 12 ns
...
Description
WS57C191C/291C
HIGH SPEED 2K x 8 CMOS PROM/RPROM
KEY FEATURES
Ultra-Fast Access Time
— t ACC = 25 ns — t CS = 12 ns
Pin Compatible with Am27S191/291
and N82S191 Bipolar PROMs
Immune to Latch-UP
— Up to 200 mA
Low Power Consumption Fast Programming Available in 300 Mil DIP and PLDCC
ESD Protection Exceeds 2000V
GENERAL DESCRIPTION
The WS57C191C/291C is an extremely High Performance 16K UV Erasable Electrically Re-Programmable Read Only Memory (RPROM). It is manufactured in an advanced CMOS technology which enables it to operate at Bipolar PROM speeds while consuming only 25% of the power required by its Bipolar counterparts. The WS57C191C/291C is also configured in the standard Bipolar PROM pinout which provides an easy upgrade path for systems which are currently using Bipolar PROMs. The WS57C191C is packaged in a conventional 600 mil DIP package as well as a Plastic Leaded Chip Carrier (PLDCC) and a Ceramic Leadless Chip Carrier (CLLCC). The WS57C291C is packaged in a space saving 300 mil DIP package configuration. Both are available in commercial, industrial, and military operating temperature ranges.
BLOCK DIAGRAM
EPROM ARRAY
PIN CONFIGURATION
TOP VIEW
6 A5 - A10 ROW ADDRESSES
ROW DECODER
Chip Carrier
16,384 BITS
CERDIP/Plastic DIP
NC
A5 A 6 A 7
5 A0 - A4 COLUMN ADDRESSES COLUMN DECODER
VCC A8 A9
SENSE AMPLIFIERS
CS1/ VPP CS2 CS3 8
A4 A3 A2 A1 A0 NC O0
4 3 2 28 27 26 1 5 25 6 24 7 23 8 22 9 21 10 20 11 19 12 13 14 15 16 17 18 O1 O2 NC O3 O...
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