NPN EPITAXIAL SILICON TRANSISTORS
High Voltage Transistor
WMBTA92
SOT— —23
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Die Size 0.6X0.6mm
Power Dissipation: 225mW
Collector Current : Max 500mA
1. BASE 2. EMITTER
3. COLLECTOR
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Bonding Pad Size Emittoe 100*100mkm base 100*100mkm
GUARANTEED PROBED CHARACTERISTICS (TA=25℃) Characteristic Collector-emitter Breakdown Voltage Collector-Base Br...
