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WMBT3906
PNP EPITAXIAL SILICON TRANSISTORS
Description
PNP
EPITAXIAL SILICON
TRANSISTOR
S High Voltage
Transistor
SOT— —23 WMBT3906 ! ! Power Dissipation: 225mW Collector Current: Max. 0.2A 1. BASE 2. EMITTER 3. COLLECTOR GUARANTEED PROBED CHARACTERISTICS (TA=25℃) Limits Characteristic Symbol Test Conditions Units MIN. 40 40 5.0 50 60 80 100 60 30 650 MAX. Collector-emitter Breakdown Voltage Collector-Base Br...
Wing Shing Computer Components
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