NPN EPITAXIAL SILICON TRANSISTORS
High Voltage Transistor
SOT— —23
WMBT3904
! !
Power Dissipation: 225mW Collector Cu...
NPN EPITAXIAL SILICON
TRANSISTORS
High Voltage
Transistor
SOT— —23
WMBT3904
! !
Power Dissipation: 225mW Collector Current: Max. 0.2A
1. BASE
2. EMITTER
3. COLLECTOR
GUARANTEED PROBED CHARACTERISTICS (TA=25℃) Limits Characteristic Symbol Test Conditions Units
MIN. 40 60 6.0 50 40 70 100 60 30 650 MAX. Collector-emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current BVCEO BVCBO BVEBO ICEX hFE1 hFE2 hFE3 hFE4 hFE5 BVESAT1 BVESAT2 VCE(SAT)1 VCE(SAT)2 fT IC=1mA IC=100µA IE=10µA VCE=30V, VBE=3V VCE=1V, IC=100µA VCE=1V, IC=1mA VCE=1V, IC=10mA VCE=1V, IC=50mA VCE=1V, IC=100mA IC=10mA, IB=1mA IC=50mA,IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10, VCE=20V f=100MHz V V V nA
DC Current Gain
300
850 mV Base-Emitter Saturation Voltage 950 mV 200 mV Collector-Emitter Saturation Voltage 200 mV Transition Frequency 300 MHz Collector-Base COB VCB=5V, f=1MHz 4 PF Capacitance NOTES: Due to probe testing limitations, only the DC parameters are tested.
Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail:
[email protected]
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