W49F201

Preliminary W49F201 128K × 16 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F201 is a 2-megabit, 5-volt only CMOS flash memory organized as 128K × 16 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49F201 results in fast program/erase operations with extremely low current consumption (compared to other comparable 5-volt flash memory products). The device can also be programmed and erased using standard EPROM programmers. FEATURES Single 5-volt operations: − 5-volt Read/Erase/Program Fast Program operation: − Word-by-Word programming: 50 µS (max.) Fast Erase operation: 60 mS (typ.) Fast Read access time: 45/55 nS Endurance: 1K/10K cycles (typ.) Ten-year data retention Hardware data protection Sector configuration − One 8K words boot block with lockout protection − Two 8K words parameter blocks − One 104K words (208K bytes) Main Memory Array Blocks Low power consumption − Active current: 25 mA (typ.) − Standby current: 20 µA (typ.) Automatic program and erase timing with internal VPP generation End of program or erase detection − Toggle bit − Data polling Latched address and data TTL compatible I/O JEDEC standard word-wide pinouts Available packages: 44-pin SOP, 48-pin TSOP -1- Publication Release Date: June 1999 Revision A1 Preliminary W49F201 PIN CONFIGURATIONS BLOCK DIAGRAM VDD VSS NC NC NC A7 A6 A5 A4 A3 A2 A1 A0 CE GND OE D...