128K x 8 CMOS FLASH MEMORY
W29EE012
128K × 8 CMOS FLASH MEMORY
GENERAL DESCRIPTION
The W29EE012 is a 1-megabit, 5-volt only CMOS flash memory org...
Description
W29EE012
128K × 8 CMOS FLASH MEMORY
GENERAL DESCRIPTION
The W29EE012 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K × 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29EE012 results in fast program/erase operations with extremely low current consumption (compared to other comparable 5-volt flash memory products). The device can also be programmed and erased using standard EPROM programmers.
FEATURES
Single 5-volt program and erase operations Fast page-write operations
− 128 bytes per page − Page program cycle: 10 mS (max.) − Effective byte-program cycle time: 39 µS − Optional software-protected data write Fast chip-erase operation: 50 mS Page program/erase cycles: 1,000 Ten-year data retention Software and hardware data protection
Low power consumption − Active current: 25 mA (typ.) − Standby current: 20 µA (typ....
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