VTP Process Photodiodes
VTP Process Photodiodes
VTP1232
PACKAGE DIMENSIONS inch (mm)
(Also available in infrared transmitting visible blockin...
Description
VTP Process Photodiodes
VTP1232
PACKAGE DIMENSIONS inch (mm)
(Also available in infrared transmitting visible blocking version)
CASE 26 T-1¾ CHIP ACTIVE AREA: .0036 in2 (2.326 mm2)
PRODUCT DESCRIPTION
This photodiode features the largest detection area available in a clear, endlooking T-1¾ package. Combined with excellent dark current, it can fulfill the demands of many difficult applications.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature: Operating Temperature: -40°C to 100°C -40°C to 100°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTP curves, page 46)
VTP1232
SYMBOL ISC TC ISC Re VOC TC VOC ID CJ λrange λp SR CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Responsivity Open Circuit Voltage VOC Temperature Coefficient Dark Current Junction Capacitance Spectral Application Range Spectral Response - Peak Sensitivity @ Peak TEST CONDITIONS Min. H = 100 fc, 2850 K 2850 K 880 nm H = 100 fc, 2850 K 2850 K H = 0, VR = 10 V H = 0, V = 0 V 400 920 0.60 .18 0.06 .42 -2.0 25 .30 1100 100 0.20 0.076 Typ. Max. µA %/°C A/(W/cm2) mV mV/°C nA nF nm nm A/W UNITS
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
52
...
Similar Datasheet