VTE1113

GaAs Infrared Emitting Diodes TO-46 Lensed Package — 940 nm VTE1113 PACKAGE DIMENSIONS inch (mm) DESCRIPTION CASE 24 TO-46 HERMETIC (Lensed) CHIP SIZE: .018" X .018" This narrow beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAs, 940 nm IRED chip suitable for higher current pulse applications. ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30°C: Maximum Continuous Current: Derate above 30°C: Peak Forward Current, 10 µs, 100 pps: Temp. Coefficient of Power Output (Typ.): -55°C to 125°C 200 mW 2.11 mW/°C 100 mA 1.05 mA/°C 3.0 A -.8%/°C Maximum Reverse Voltage: Maximum Reverse Current @ VR = 5V: Peak Wavelength (Typical): Junction Capacitance @ 0V, 1 MHz (Typ.): Response Time @ IF = 20 mA Rise:1.0 µs Fall: 1.0 µs Lead Soldering Temperature: (1.6 mm from case, 5 seconds max. 5.0V 10 µA 940 nm 35 pF 260°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also GaAlAs curves, pages 123-124) Output Irradiance Part Number Ee mW/cm2 Min. VTE1113 12 Typ. 15 Condition distance mm 36 Diameter mm 6.4 Radiant Intensity Ie mW/sr Min. 156 Total Power PO mW Typ. 30 Test Current IFT mA (Pulsed) 1.0 Forward Drop VF @ IFT Volts Typ. Typ. 1.9 Max. 2.5 ±10° Half Power Beam Angle θ1/2 Refer to General Product Notes, page 2. PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto 127 ...