Document
VTB Process Photodiodes
VTB9412B, 9413B
PACKAGE DIMENSIONS inch (mm)
CASE 20F 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2)
PRODUCT DESCRIPTION
Small area planar silicon photodiode in a recessed ceramic package. The package incorporates an infrared rejection filter. These diodes have very high shunt resistance and have good blue response.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature: Operating Temperature: -20°C to 75°C -20°C to 75°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTB curves, pages 21-22)
VTB9412B
SYMBOL ISC TC ISC VOC TC VOC ID RSH TC RSH CJ λrange λp VBR θ1/2 NEP D* CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt Resistance RSH Temperature Coefficient Junction Capacitance Spectral Application Range Spectral Response - Peak Breakdown Voltage Angular Resp. - 50% Resp. Pt. Noise Equivalent Power Specific Detectivity 2 TEST CONDITIONS Min. H = 100 fc, 2850 K 2850 K H = 100 fc, 2850 K 2850 K H = 0, VR = 2.0 V H = 0, V = 10 mV H = 0, V = 10 mV H = 0, V = 0 330 580 40 ±50 5.3 x 10-14 (Typ.) 2.4 x 10 12 (Typ.) 2 .25 -8.0 .31 720 330 580 40 ±50 1.1 x 10-14 (Typ.) 1.2 x 10 13 (Typ.) .8 Typ. 1.3 .02 420 -2.0 100 7.0 -8.0 .31 720 .08 Max. Min. .8 Typ. 1.3 .02 420 -2.0 20 .08 Max. µA %/°C mV mV/°C pA GΩ %/°C nF nm nm V Degrees W ⁄ Hz cm Hz / W
VTB9413B
UNITS
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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