VTB Process Photodiodes
VTB Process Photodiodes
VTB9412, 9413
PACKAGE DIMENSIONS inch (mm)
CASE 20 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (...
Description
VTB Process Photodiodes
VTB9412, 9413
PACKAGE DIMENSIONS inch (mm)
CASE 20 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2)
ABSOLUTE MAXIMUM RATINGS PRODUCT DESCRIPTION
Small area planar silicon photodiode in a recessed ceramic package. The chip is coated with a protective layer of clear epoxy. These diodes have very high shunt resistance and have good blue response. Storage Temperature: Operating Temperature: -20°C to 75°C -20°C to 75°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTB curves, pages 21-22)
VTB9412
SYMBOL ISC TC ISC VOC TC VOC ID RSH TC RSH CJ SR λrange λp VBR θ1/2 NEP D* CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt Resistance RSH Temperature Coefficient Junction Capacitance Sensitivity Spectral Application Range Spectral Response - Peak Breakdown Voltage Angular Resp. - 50% Resp. Pt. Noise Equivalent Power Specific Detectivity 2 TEST CONDITIONS Min. H = 100 fc, 2850 K 2850 K H = 100 fc, 2850 K 2850 K H = 0, VR = 2.0 V H = 0, V = 10 mV H = 0, V = 10 mV H = 0, V = 0 365 nm 320 920 40 ±50 3.0 x 10-14 (Typ.) 4.2 x 10
12 (Typ.)
VTB9413
UNITS
Typ. 13 .12 490 -2.0
Max.
.23
Min. 8
Typ. 13 .12 490 -2.0
Max.
µA .23 %/°C mV mV/°C 20 pA GΩ %/°C nF A/W 1100 nm nm V Degrees W ⁄ Hz cm Hz / W
8
100 .25 -8.0 .31 .09 1100 320 920 2 40 ±50 5.9 x 10-15 (Typ.) 2.1 x 10 13 (Typ.) 7.0 -8.0 .31 .09
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: ...
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