DATA SHEET
MOS INTEGRATED CIRCUIT
µPD16803
MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT
DESCRIPTION
The µPD16803 is a mono...
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD16803
MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT
DESCRIPTION
The µPD16803 is a monolithic dual H bridge driver circuit which uses N-channel power MOS FETs in its driver stage. By employing the power MOS FETs for the output stage, this driver circuit has a substantially improved saturation voltage and power consumption as compared with conventional driver circuits that use bipolar
transistors. In addition, the drive current can be adjusted by an external resistor in a power-saving mode. The µPD16803 is therefore ideal as the driver circuit of the 2-phase excitation, bipolar-driven stepping motor for the head actuator of an FDD.
FEATURES
Low ON resistance (sum of ON resistors of top and bottom
transistors) RON1 = 1.5 Ω TYP. (VM = 5.0 V) RON2 = 2.0 Ω TYP. (VM = 12.0 V) Low current consumption: IDD = 0.4 mA TYP. Stop mode function that turns OFF all output
transistors Compact surface mount package: 20-pin plastic SOP (300 mil)
PIN CONFIGURATION (Top View)
C1H C2L VM1 1A PGND 2A VDD IN1 IN2 INC
1 2 3 4 5 6 7 8 9 10
20 19 18 17 16 15 14 13 12 11
C1L C2H VG 1B PGND 2B VM2 RX PS DGND
Document No. S11452EJ2V0DS00 (2nd edition) Date Published July 1997 N Printed in Japan
©
1997
µPD16803
ORDERING INFORMATION
Part Number Package 20-pin plastic SOP (300 mil)
µPD16803GS
BLOCK DIAGRAM
0.01 µ F VDD C1L C1H C2L 0.01 µ F C2H VG 0.01 µ F
OSC CIRCUIT
CHARGE PUMP
2 × VDD + VM
Note 1
VM
VM1 RX BAND GAP REFERENCE LEVEL CONTROL CIRCUIT “...