UPC8182TB

PRELIMINARY DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8182TB 3 V, 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The µPC8182TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC is low current consumption and wide band than µPC2771TB. This IC is manufactured using NEC’s 25 GHz fT UHS0 silicon bipolar process. This process uses direct silicon nitride passivation film and gold electrodes. These materials can protect the chip surface from pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability. FEATURES High-density surface mounting Supply voltage Circuit current Medium output power : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm) : VCC = 2.7 to 3.3 V : ICC = 30 mA TYP. @ VCC = 3.0 V : PO(1dB) = +9.5 dBm TYP. @ f = 0.9 GHz PO(1dB) = +9.0 dBm TYP. @ f = 1.9 GHz PO(1dB) = +8.0 dBm TYP. @ f = 2.4 GHz Power gain : GP = 21.5 dB TYP. @ f = 0.9 GHz GP = 20.5 dB TYP. @ f = 1.9 GHz GP = 20.5 dB TYP. @ f = 2.4 GHz Upper limit operating frequency : fu = 2.9 GHz TYP. @ 3 dB bandwidth APPLICATION Buffer amplifiers on 1.9 GHz to 2.4 GHz mobile communications system. ORDERING INFORMATION Part Number Package 6-pin super minimold Marking C3F Supplying Form Embossed tape 8 mm wide. 1, 2, 3 pins face to perforation side of the tape. Qty 3 kp/reel. µPC8182TB-E3 Remark To order evaluation samples, please contact your local N...