UPC8130TA

DATA SHEET µPC8130TA, µPC8131TA –15 dBm INPUT, VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE BIPOLAR ANALOG INTEGRATED CIRCUITS DESCRIPTION The µPC8130TA and µPC8131TA are silicon monolithic integrated circuits designed as variable gain amplifier. Due to 800 MHz to 1.5 GHz operation, these ICs are suitable for RF transmitter AGC stage of digital cellular telephone. These ICs are lower distortion than conventional µPC8119T and µPC8120T so that –15 dBm input level can be applied. These ICs also available in two types of gain control so you can choose either IC in accordance with your system design. 3 V supply voltage and minimold package contribute to make your system lower voltage, decreased space and fewer components. The µPC8130TA and µPC8131TA are manufactured using NEC’s 20 GHz fT NESAT™III silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability. FEATURES Recommended operating frequency: f = 800 MHz to 1.5 GHz Low distortion : Padj ≤ –60 dBc MAX. @Pin = –15 dBm, ∆f = ±50 kHz, VCC = 3.0 V, TA = +25 °C Supply voltage : VCC = 2.7 to 3.3 V Low current consumption : ICC = 11 mA TYP. @VCC = 3.0 V Gain control voltage : VAGC = 0 to 2.4 V (recommended) Two types of gain control : µPC8130TA = VAGC up vs. Gain up (Reverse c...