3 V/ 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER
DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUITS
µPC2762TB,µPC2763TB,µPC2771TB
3 V, SUPER MINIMOLD SILICON MMIC MEDIUM OU...
Description
DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUITS
µPC2762TB,µPC2763TB,µPC2771TB
3 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS
DESCRIPTION
The µPC2762TB, µPC2763TB and µPC2771TB are silicon monolithic integrated circuits designed as amplifier for mobile communications. Each of the ICs is packaged in super minimold package which is smaller than conventional minimold. The µPC2762TB, µPC2763TB and µPC2771TB have compatible pin connections and performance to
µPC2762T, µPC2763T and µPC2771T of conventional minimold version. So, in the case of reducing your system
size, µPC2762TB, µPC2763TB and µPC2771TB are suitable to replace from µPC2762T, µPC2763T and µPC2771T. These IC is manufactured using NEC’s 20 GHz fT NESAT™III silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.
FEATURES
High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm) Supply voltage Medium output power : VCC = 2.7 to 3.3 V : µPC2762TB: PO(1 dB) = +8.0 dBm TYP. @ 0.9 GHz
µPC2763TB: PO(1 dB) = +9.5 dBm TYP. @ 0.9 GHz µPC2771TB: PO(1 dB) = +11.5 dBm TYP. @ 0.9 GHz
Power gain : µPC2762TB: GP = 13 dB TYP. @ 0.9 GHz
µPC2763TB: GP = 20 dB TYP. @ 0.9 GHz µPC2771TB: GP = 21 dB TYP. @ 0.9 GHz
APPLICATIONS
Buffer amplifiers for mobile t...
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