Document
NEC's NPN SILICON RF TWIN TRANSISTOR
FEATURES
• • • • LOW VOLTAGE, LOW CURRENT OPERATION SMALL PACKAGE OUTLINE: 1.2 mm x 0.8 mm LOW HEIGHT PROFILE:
1
UPA862TD
OUTLINE DIMENSIONS
(Units in mm)
Package Outline TD (TOP VIEW)
1.0±0.05 0.8 +0.07 -0.05 (Top View)
0.15±0.05 6
Just 0.50 mm high
0.4
TWO DIFFERENT DIE TYPES: Q1 - Ideal buffer amplifier transistor Q2 - Ideal oscillator transistor
1.2 +0.07 -0.05 0.8
C1
1
Q1
6
B1
vY
2
5
E1
4
0.4
2 Q2
5
E2
•
IDEAL FOR 1-2 GHz OSCILLATORS
3
C2
3
4
B2
DESCRIPTION
NEC's UPA862TD contains one NE851 and one NE685 NPN high frequency silicon bipolar chip. The NE851 is an excellent oscillator chip, featuring low 1/f noise and high immunity to pushing effects. The NE685 is an excellent buffer transistor, featuring low noise and high gain. NEC's new ultra small TD package is ideal for all portable wireless applications where reducing board space is a prime consideration. Each transistor chip is independently mounted and easily configured for oscillator/buffer amplifier and other applications.
0.5±0.05 0.125 +0.1 -0.05
PIN CONNECTIONS 1. Collector (Q1) 2. Emitter (Q1) 3. Collector (Q2) 4. Base (Q2) 5. Emitter (Q2) 6. Base (Q1)
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER PACKAGE OUTLINE SYMBOLS ICBO IEBO hFE PARAMETERS AND CONDITIONS Collector Cutoff Current at VCB = 5 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 DC Current Gain1 at VCE = 3 V, IC = 10 mA GHz pF dB dB nA nA 100 GHz pF dB dB dB 3.0 4.5 5.0 120 6.5 0.6 4.0 5.5 1.9 2.5 0.8 7 Gain Bandwidth at VCE = 3 V, IC = 10 mA, f = 2 GHz Feedback Capacitance2 at VCB = 3 V, IE = 0, f = 1 MHz Insertion Power Gain at VCE = 3 V, IC =10 mA, f = 2 GHz Noise Figure at VCE = 3 V, IC = 3 mA, f = 2 GHz Collector Cutoff Current at VCB = 10 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 DC Current Gain1 at VCE = 3 V, IC = 7 mA Gain Bandwidth at VCE = 1 V, IC = 15 mA, f = 2 GHz Feedback Capacitance2 at VCB = 3 V, IE = 0, f = 1 MHz Insertion Power Gain at VCE = 1 V, IC =5 mA, f = 2 GHz UNITS nA nA 75 10 110 12 0.4 8.5 1.5 2.5 600 600 145 0.7 MIN UPA862TD TD TYP MAX 100 100 150
Q1
fT Cre |S21E|2 NF ICBO IEBO hFE
Q2
fT Cre |S21E|2
|S21|S21E|2E|2 Insertion Power GainIat VCE = 1 V, IC =15 mA, f = 2 GHz NF Noise Figure at VCE = 1 V, IC = 10 mA, f = 2 GHz
Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to guard pin of capacitances meter.
California Eastern Laboratories
UPA862TD ABSOLUTE MAXIMUM RATINGS1,2 (TA = 25°C)
SYMBOLS VCBO VCEO VEBO IC PT TJ TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation1 Junction Temperature Storage Temperature UNITS V V V mA mW °C °C RATINGS Q1 9 6 2 30 Q2 9 5.5 1.5 100
ORDERING INFORMATION
PART NUMBER UPA862TD-T3 QUANTITY 10K Pcs./Reel PACKAGING Tape & Reel
180 192 210 Total 150 150 -65 to +150
Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Mounted on 1.08cm2 x 1.0 mm(t) glass epoxy PCB
TYPICAL PERFORMANCE CURVES (TA = 25°C)
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
300
Total Power Dissipation, Ptot (mW)
Mounted on Glass Epoxy PCB (1.08 cm2 x 1.0 mm (t) ) 250
210
200
2 Elements in total
190 180
150
Q2 Q1
100
50
0 25 50 75 100 125 150
Ambient Temperature, TA (°C)
Q1 REVERSE TRANSFR CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE
Q2 REVERSE TRANSFR CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE
1.0
Reverse Transfer Capacitance, Cre (pF)
Reverse Transfer Capacitance, Cre (pF)
0.5 f = 1 MHz
f = 1 MHz
0.4
0.8
0.3
0.6
0.2
0.4
0.1
0.2
0 2 4 6 8 10
0 2 4 6 8 10
Collector to Base Voltage, VCB (V)
Collector to Base Voltage, VCB (V)
UPA862TD TYPICAL PERFORMANCE CURVES (TA = 25°C)
Q1 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE
100 VCE = 1 V 100
Q2 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE
VCE = 1 V
Collector Current, IC (mA)
1
Collector Current, IC (mA)
0.5 0.6 0.7 0.8 0.9 1.0
10
10
1
0.1
0.1
0.01
0.01
0.001
0.001
0.0001 0.4
0.0001 0.4
0.5
0.6
0.7
0.8
0.9
1.0
Base to Emitter Voltage, VBE (V)
Base to Emitter Voltage, VBE (V)
COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE
100 VCE = 2 V 100
COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE
VCE = 2 V
Collector Current, IC (mA)
1
Collector Current, IC (mA)
0.5 0.6 0.7 0.8 0.9 1.0
10
10
1
0.1
0.1
0.01
0.01
0.001
0.001
0.0001 0.4
0.0001 0.4
0.5
0.6
0.7
0.8
0.9
1.0
Base to Emitter Voltage, VBE (V)
Base to Emitter Voltage, VBE (V)
COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE
40
COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE
60 400 µa
Collector Current, IC (mA)
50
30 300 µa 270 µa 240 µa 240 µa 20 180 µa 150 µa 120 µa 10 90 µa 60 µa IB = 30 µa 0 1 2 3 4 5 6 7 8
360 µa 320 µa
Collector Current, IC (mA)
40
280 µa 240 µa
30
200 µa 160 µa 120 µa
20
10
80 µa IB.