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UPA828TF Dataheets PDF



Part Number UPA828TF
Manufacturers NEC
Logo NEC
Description HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5184 THIN-TYPE SMALL MINI MOLD
Datasheet UPA828TF DatasheetUPA828TF Datasheet (PDF)

PRELIMINARY DATA SHEET SILICON TRANSISTOR PPA828TF HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR (WITH BUILT-IN 6-PIN 2 u 2SC5184) THIN-TYPE SMALL MINI MOLD FEATURES • Low noise NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • 6-pin thin-type small mini mold package adopted • Built-in 2 transistors (2 u 2SC5184) PACKAGE DRAWINGS (Unit: mm) 2.10±0.1 1.25±0.1 1.30 ORDERING INFORMATION Part Number Quantity Loose.

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PRELIMINARY DATA SHEET SILICON TRANSISTOR PPA828TF HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR (WITH BUILT-IN 6-PIN 2 u 2SC5184) THIN-TYPE SMALL MINI MOLD FEATURES • Low noise NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • 6-pin thin-type small mini mold package adopted • Built-in 2 transistors (2 u 2SC5184) PACKAGE DRAWINGS (Unit: mm) 2.10±0.1 1.25±0.1 1.30 ORDERING INFORMATION Part Number Quantity Loose products (50 pcs) Taping products (3 kpcs/reel) Packing Style 2.00±0.2 0.65 2 0.65 3 PPA828TF PPA828TF-T1 0.60±0.1 Remark If you require an evaluation sample, please contact an NEC Sales Representative (Unit sample quantity is 50 pcs). PIN CONFIGURATION (Top View) B1 Unit V V V mA mW ABSOLUTE MAXIMUM RATINGS (TA = 25qC) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol VCBO VCEO VEBO IC PT Rating 5 3 2 30 90 in 1 element 180 in 2 elements 150 ð65 to +150 E2 5 6 Q1 1 C1 2 E1 0 to 0.1 B2 4 Q2 3 C2 Junction Temperature Storage Temperature Tj Tstg °C °C PIN CONNECTIONS 1. Collector (Q1) 2. Emitter (Q1) 3. Collector (Q2) 4. Base (Q2) 5. Emitter (Q2) 6. Base (Q1) Caution is required concerning excess input, such as from static electricity, due to the high-precision fabrication processes used for this device. The information in this document is subject to change without notice. Document No. P12693EJ1V0DS00 (1st edition) Date Published July 1997 N Printed in Japan © 0.13±0.05 0.45 Embossed tape 8 mm wide. Pin 6 (Q1 Base), Pin 5 (Q2 Emitter), Pin 4 (Q2 Base) face to perforation side of the tape. 4 5 0.22+0.1 –0.05 R86 1 6 1997 PPA828TF ELECTRICAL CHARACTERISTICS (TA = 25°C) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product (1) Gain Bandwidth Product (2) Feedback Capacitance Insertion Power Gain (1) Insertion Power Gain (2) Noise Figure (1) Noise Figure (2) hFE Ratio Symbol ICBO IEBO hFE fT fT Cre |S21e| |S21e| NF NF hFE1/hFE2 2 Condition VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 2 V, IC = 20 mA Note 1 MIN. TYP. MAX. 0.1 0.1 Unit PA PA 70 9 7 11 9 0.4 7 6 8.5 7.5 1.3 1.3 0.85 140 GHz GHz 0.8 pF dB dB 2 2 dB dB VCE = 2 V, IC = 20 mA, f = 2 GHz VCE = 1 V, IC = 10 mA, f = 2 GHz VCB = 2 V, IE = 0, f = 1 MHz Note 2 VCE = 2 V, IC = 20 mA, f = 2 GHz VCE = 1 V, IC = 10 mA, f = 2 GHz VCE = 2 V, IC = 3 mA, f = 2 GHz VCE = 1 V, IC = 3 mA, f = 2 GHz VCE = 2 V, IC = 20 mA hFE1 = smaller hFE value among Q1 and Q2 hFE2 = larger hFE value among Q1 and Q2 2 Notes 1. Pulse measurement PW d 350 Ps, Duty cycle d 2% 2. Capacitance between collector and base measured with a capacitance meter (auto-balancing bridge method). Emitter should be connected to the guard pin of capacitance meter. hFE CLASSIFICATION Rank Marking hFE value KB R86 70 to 140 2 PPA828TF TYPICAL CHARACTERISTICS (TA = 25 qC) Total Power Dissipation vs. Ambient Temperature 50 Total Power Dissipation PT (mW) Collector Current vs. DC Base Voltage VCE = 2 V 2 Elements in Total 180 mW Collector Current IC (mA) 200 40 30 100 Per Element 90 mW 20 10 0 50 100 150 0 0.5 DC Base Voltage VBE (V) DC Current Gain vs. Collector Current 1.0 Ambient Temperature TA (˚C) Collector Current vs. Collector to Emitter Voltage 25 Collector Current IC (mA) 500 20 15 10 5 200 µ A 180 µ A 160 µ A 140 µ A 120 µ A 100 µ A 80 µA 60 µA 40 µA IB = 20 µA 1.0 2.0 3.0 DC Current Gain hFE 200 VCE = 2 V 100 50 VCE = 1 V 20 10 0 1 2 5 10 20 50 100 Collector to Emitter Voltage VCE (V) Collector Current IC (mA) 3 PPA828TF Gain Bandwidth Product vs. Collector Current 15 f = 2 GHz 10 Insertion Power Gain vs. Collector Current f = 2 GHz VCE = 2 V Gain Bandwidth Product fT (GHz) VCE = 2 V 10 VCE = 1 V Insertion Power Gain |S21e|2 (dB) VCE = 1 V 5 5 0 1 2 3 5 7 10 20 1 2 3 5 7 10 20 Collector Current IC (mA) Noise Figure vs. Collector Current 3 f = 2 GHz Collector Current IC (mA) Feedback Capacitance vs. Collector to Base Voltage 0.8 Feedback Capacitance Cre (pF) f = 1 MHz 0.6 Noise Figure NF (dB) 2 VCE = 2 V 0.4 VCE = 1 V 1 0.2 1 2 3 5 7 10 0 2.0 4.0 6.0 8.0 10.0 Collector Current IC (mA) Collector to Base Voltage VCB (V) 4 PPA828TF S PARAMETER Q1 VCE = 2 V, IC = 1 mA, Z0 = 50 : FREQUENCY GHz .10 .20 .30 .40 .50 .60 .70 .80 .90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 S11 MAG. .98 .96 .95 .92 .90 .87 .83 .80 .76 .72 .68 .64 .60 .56 .53 .50 .47 .45 .44 .43 .42 .41 .42 .42 .43 .44 .45 .46 .47 .48 ANG. ð6.87 ð13.71 ð20.79 ð27.69 ð34.82 ð42.10 ð49.35 ð56.87 ð64.78 ð72.15 ð80.50 ð88.71 ð97.33 ð106.17 ð115.63 ð124.41 ð133.52 ð142.93 ð152.17 ð161.16 ð170.55 ð179.15 173.21 165.82 158.63 152.11 146.49 140.70 135.62 131.49 MAG. 2.42 2.40 2.42 2.39 2.39 2.36 2.34 2.32 2.32 2.26 2.25 2.22 2.16 2.13 2.10 2.04 1.99 1.93 1.87.


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