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UPA826TC Dataheets PDF



Part Number UPA826TC
Manufacturers NEC
Logo NEC
Description NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 2 x 2SC5010 FLAT-LEAD 6-PIN THIN -TYPE ULTRA SUPER MINIMOLD
Datasheet UPA826TC DatasheetUPA826TC Datasheet (PDF)

DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA826TC NPN SILICON EPITAXIAL TWIN TRANSISTOR (WITH BUILT-IN 2 × 2SC5010) FLAT-LEAD 6-PIN THIN -TYPE ULTRA SUPER MINIMOLD FEATURES • Low noise and high gain • Operable at low voltage • Small feedback capacitance: Cre = 0.4 pF TYP. • Flat-lead 6-pin thin-type ultra super minimold package • Built-in 2 transistors (2 × 2SC5010) ORDERING INFORMATION Part Number Package Flat-lead 6-pin thin-type ultra super minimold Quantity Loose products (50 pcs) Tapi.

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DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA826TC NPN SILICON EPITAXIAL TWIN TRANSISTOR (WITH BUILT-IN 2 × 2SC5010) FLAT-LEAD 6-PIN THIN -TYPE ULTRA SUPER MINIMOLD FEATURES • Low noise and high gain • Operable at low voltage • Small feedback capacitance: Cre = 0.4 pF TYP. • Flat-lead 6-pin thin-type ultra super minimold package • Built-in 2 transistors (2 × 2SC5010) ORDERING INFORMATION Part Number Package Flat-lead 6-pin thin-type ultra super minimold Quantity Loose products (50 pcs) Taping products (3 kp/reel) Supplying Form Embossed tape 8 mm wide. Pin 6 (Q1 Base), Pin 5 (Q2 Emitter), Pin 4 (Q2 Base) face to perforation side of the tape. µPA826TC µPA826TC-T1 Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: µPA826TC. Unit sample quantity is 50 pcs). ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol VCBO VCEO VEBO IC PT Note Ratings 9 6 2 30 180 in 1 element 230 in 2 elements 150 −65 to 150 Unit V V V mA mW Junction Temperature Storage Temperature Tj Tstg °C °C 2 Note Mounted on 1.08 cm × 1.0 mm glass epoxy substrate. Caution Electro-static sensitive devices The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. P14553EJ1V0DS00 (1st edition) Date Published November 1999 N CP(K) Printed in Japan © 1999 µPA826TC ELECTRICAL CHARACTERISTICS (TA = +25 °C) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Feedback Capacitance Insertion Power Gain Noise Figure Symbol ICBO IEBO hFE fT Cre |S21e| NF 2 Conditions VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 3 V, IC = 7 mA Note 1 MIN. − − 75 10.0 − 7.0 − TYP. − − − 12.0 0.4 8.5 1.5 MAX. 0.1 0.1 150 − 0.7 − 2.5 Unit µA µA VCE = 3 V, IC = 7 mA, f = 1 GHz VCB = 3 V, IE = 0, f = 1 MHz Note 2 GHz pF dB dB VCE = 3 V, IC = 7 mA, f = 1 GHz VCE = 3 V, IC = 7 mA, f = 1 GHz Notes 1. 2. Pulse Measurement: PW ≤ 350 µs, Duty Cycle ≤ 2% Capacitance between collector and base measured with a capacitance meter (auto−balancing bridge method). Emitter should be connected to the guard pin of capacitance meter. hFE CLASSIFICATION Rank Marking hFE Value KB 83 75 to 150 2 Data Sheet P14553EJ1V0DS00 µPA826TC TYPICAL CHARACTERISTICS (TA = +25 °C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 230 200 180 Per Element 2 Elements in total Free Air Collector Current IC (mA) 50 VCE = 3 V 40 COLLECTOR CURRENT vs. DC BASE VOLTAGE Total Power Dissipation PT (mW) 30 100 20 10 0 0 50 100 150 0 0 0.5 DC Base Voltage VBE (V) DC CURRENT GAIN vs. COLLECTOR CURRENT 1.0 Ambient Temperature TA (°C) COLLECTOR CURRENT vs. COLLECTOR .


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