UPA810TC

DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA810TC NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 × 2SC5006) FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD DESCRIPTION The µPA810TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA High gain: |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA Flat-lead 6-pin thin-type ultra super minimold Built-in 2 transistors (2 × 2SC5006) ORDERING INFORMATION Part Number Package Flat-lead 6-pin thin-type ultra super minimold Quantity Loose products (50 pcs) Supplying Form Embossed tape 8 mm wide. Pin 6 (Q1 Base), Pin 5 (Q1 Emitter), Pin 4 (Q2 Emitter) face to perforation side of the tape. µPA810TC µPA810TC-T1 Taping products (3 kp/reel) Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: µPA810TC. Unit sample quantity is 50 pcs.) ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol VCBO VCEO VEBO IC PTNote Ratings 20 12 3 100 200 in 1 element 230 in 2 elements 150 –65 to +150 Unit V V V mA mW Junction Temperature Storage Temperature Tj Tstg ˚C ˚C Note Mounted on 1.08 cm2 × 1.0 mm glass epoxy substrate. Caution Electro-static sensitive devices The information in this document is subject to change w...