DATA SHEET
SILICON TRANSISTOR
µPA808T
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2...
DATA SHEET
SILICON
TRANSISTOR
µPA808T
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL
TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) SUPER MINI MOLD
FEATURES
Low Noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz A Super Mini Mold Package Adopted Built-in 2
Transistors (2 × 2SC5184)
2.0±0.2
PACKAGE DRAWINGS (Unit: mm)
2.1±0.1 1.25±0.1
1.3
ORDERING INFORMATION
PART NUMBER QUANTITY Loose products (50 PCS) Taping products (3 KPCS/Reel) PACKING STYLE Embossed tape 8 mm wide. Pin 6 (Q1 Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter) face to perforation side of the tape.
0.65
2
µPA808T µPA808T-T1
0.65
3
0.9±0.1
pcs.)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation SYMBOL VCBO VCEO VEBO IC PT RATING 5 3 2 30 90 in 1 element 180 in 2 elementsNote 150 –65 to +150 UNIT V V V mA mW
PIN CONFIGURATION (Top View)
6 Q1
0 to 0.1
NEC Sales Representative. (Unit sample quantity is 50
5
4
Q2
1
2
3
Junction Temperature Storage Temperature
Tj Tstg
°C °C
PIN CONNECTIONS 1. Collector (Q1) 4. Emitter (Q2) 2. Emitter (Q1) 5. Base (Q2) 3. Collector (Q2) 6. Base (Q1)
Note 110 mW must not be exceeded in 1 element.
This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.
Document No. P12154EJ2V0DS00 (2nd edition) (Previous No. ...
