Document
DATA SHEET
SILICON TRANSISTOR
µPA807T
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) SUPER MINI MOLD
FEATURES
• Low Current, High Gain |S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5179)
2.0±0.2
PACKAGE DRAWINGS (Unit: mm)
2.1±0.1 1.25±0.1
1.3
ORDERING INFORMATION
PART NUMBER QUANTITY Loose products (50 PCS) Taping products (3 KPCS/Reel) PACKING STYLE Embossed tape 8 mm wide. Pin 6 (Q1 Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter) face to perforation side of the tape.
0.65
2
µPA807T µPA807T-T1
0.65
3
0.9±0.1
pcs.)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation SYMBOL VCBO VCEO VEBO IC PT RATING 5 3 2 10 30 in 1 element 60 in 2 elements 150 –65 to +150 UNIT V V V mA mW
PIN CONFIGURATION (Top View)
6 Q1
0 to 0.1
NEC Sales Representative. (Unit sample quantity is 50
5
4
Q2
1
2
3
Junction Temperature Storage Temperature
Tj Tstg
°C °C
PIN CONNECTIONS 1. Collector (Q1) 4. Emitter (Q2) 2. Emitter (Q1) 5. Base (Q2) 3. Collector (Q2) 6. Base (Q1)
This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.
Document No. P12153EJ2V0DS00 (2nd edition) (Previous No. ID-3641) Date Published November 1996 N Printed in Japan
© ©
0.15 +0.1 –0
Remark If you require an evaluation sample, please contact an
0.7
4
5
0.2 +0.1 –0
1
6
X Y
1995 1994
µPA807T
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
PARAMETER Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product (1) Gain Bandwidth Product (2) Feed-back Capacitance Insertion Power Gain (1) Insertion Power Gain (2) Noise Figure (1) Noise Figure (2) hFE Ratio SYMBOL ICBO IEBO hFE fT fT Cre |S21e|2 |S21e|2 NF NF hFE1/hFE2 CONDITION VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 2 V, IC = 7 mANote 1 70 10 8.5 13 12 0.4 7.5 7 9 8.5 1.5 1.5 0.85 2 2 0.6 MIN. TYP. MAX. 0.1 0.1 140 GHz GHz pF dB dB dB dB UNIT
µA µA
VCE = 2 V, IC = 7 mA, f = 2 GHz VCE = 1 V, IC = 5 mA, f = 2 GHz VCB = 2 V, IE = 0, f = 1 MHzNote 2 VCE = 2 V, IC = 7 mA, f = 2 GHz VCE = 1 V, IC = 5 mA, f = 2 GHz VCE = 2 V, IC = 3 mA, f = 2 GHz VCE = 1 V, IC = 3 mA, f = 2 GHz VCE = 2 V, IC = 7 mA A smaller value among hFE of hFE1 = Q1, Q2 A larger value among hFE of hFE2 = Q1, Q2
Notes 1. Pulse Measurement: Pw ≤ 350 µs, Duty cycle ≤ 2 % 2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
hFE CLASSIFICATION
Rank Marking hFE Value KB T84 70 to 140
TYPICAL CHARACTERISTICS (TA = 25 °C)
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 50 Total Power Dissipation PT (mW) 200 Collector Current IC (mA) 40 VCE = 2 V COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE
30
100 2 Elements in Total Per Element 60 mW 3.