UPA806T

PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA806T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD FEATURES Low Noise, High Gain Operable at Low Voltage Small Feed-back Capacitance Cre = 0.4 pF TYP. Built-in 2 Transistors (2 × 2SC4959) PACKAGE DRAWINGS (Unit: mm) 2.1±0.1 1.25±0.1 0.65 0.65 2.0±0.2 1.3 2 ORDERING INFORMATION PART NUMBER QUANTITY Loose products (50 PCS) PACKING STYLE Embossed tape 8 mm wide. Pin 6 (Q1 Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter) face to perforation side of the tape. 3 0.9±0.1 µPA806T 0.7 4 5 µPA806T-T1 Taping products (3 KPCS/Reel) Remark If you require an evaluation sample, please contact an NEC Sales Representative. (Unit sample quantity is 50 pcs.) PIN CONFIGURATION (Top View) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation SYMBOL VCBO VCEO VEBO IC PT RATING 9 6 2 30 150 in 1 element 200 in 2 elements Note 150 –65 to +150 UNIT V V V mA mW 6 Q1 5 0~0.1 4 Q2 1 2 3 PIN CONNECTIONS 4. Emitter (Q2) 1. Collector (Q1) 5. Base (Q2) 2. Emitter (Q1) 6. Base (Q1) 3. Collector (Q2) Junction Temperature Storage Temperature Tj Tstg ˚C ˚C Note 110 mW must not be exceeded in 1 element. The information in this document is subject to change without notice. Document No. ID-3640 (O.D. No. ID-9147) Date Published April 1995 P Printed in Japan © 0.15 –...